Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001 CdSe Nylon/Al more than 2N/15mm

Nylon/Al      more than 2N/15mm

EPD                                                     <15000 / cm 2

Features 316 stainless steel construction

Application case

Composition:     NiO  ceramic

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001 CdSe Nylon/Al more than 2N/15mmThermal oxide Layer Research Grade, about 80% useful area SiO2 layer on 4"Silicon wafer Oxide layer thickness: 300 nm (3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type Sb dped Resistivity: 0. 01 0. 02 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 525 mmth Orientation: (111) + 0. 5o Polish: one side