GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp Orientation 10-14 Oxygen free copper gasket for

Oxygen free copper gasket for high vacuum sealing of OTF-1200X-HVHP-80

Thermocouple is not included

they are generally not used in dynamic applications

Surface Quality: 80/50

Orientation:                   (100)

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp Orientation 10-14 Oxygen free copper gasket forGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: N type Carrier Concentration: (1. 60 3. 94) E18 cm^3 Mobility: (1400 2100) cm^2 V. S Resistivity: (1. 08 1. 90) E 3 ohm. cm EPD: < 500cm^2 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces