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VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm Saws 110V AC or 220V AC
VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm Saws 110V AC or 220V AC
$357.86
Description
110V AC or 220V AC selectable for universal use
wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition
Single crystal CdS window
Single sides area density: 4
0185" thickness
VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm Saws 110V AC or 220V ACGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: Two sides polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 128 0. 303Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (1. 07 2. 89) x10^16 c. c Mobility: 1690 2070 cm^2
Shipping Notes
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 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm Saws 110V AC or 220V AC){kind=link}