VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm Testing Cells Sutface Roughness: CMP polished with

Sutface Roughness:   CMP polished with min

when operating in the glove box

both for one side or double side film

Please choose the standard size as the picture left for quick delivery and lower cost

Orientation: (111) +/-0

VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm Testing Cells Sutface Roughness: CMP polished withGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: One side epi polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Conductor type: N type Resistivity: 0. 088 0. 183 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier concentration: (0. 78 3. 02)x10^16 c. c Mobility: 2350 3010 cm^2. v.