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GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP Ce Orientation: (110) +/- 0
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP Ce Orientation: (110) +/- 0
$171.93
Description
Orientation: (110) +/- 0
Storage temperature
and preparing small volume high-tech material production
Such a great feature is available upon request at the extra cost ( add $195 )
Size: 5 x 5 x 0
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, 2SP Ce Orientation: (110) +/- 0GaAs single crystal wafer Growing Method: VGF Orientation: (100)+ 0. 5 degree Size: 2" dia x 0. 5mm Polishing: Double sides polished Doping: un doped Conductor type: Semi insulating Ra(Average Roughness) : < 0. 4 nm Mobility: 4890 6180 cm^2 V. S Resistivity: (0. 76 4. 40)x10^8 ohm. cm EPD: <5000cm^2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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