, S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Mass resistivity: 0){kind=link}
Lip and Eye Makeup Remover
US$ 36.75
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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Mass resistivity: 0
InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Mass resistivity: 0
$126.50
Description
Mass resistivity: 0
5"thickness (900 x 600 x 60 mm
Transmittance of ITO glass: > 83%
Oxygen free copper gasket for high vacuum sealing of 61mmOTF-1200X-HP-30
must have Grounding tests(GFCI) before first-time use
InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes La Mass resistivity: 0Growth method LEC Orientation (411) 0. 5 Deg Orientation Flat N A Doping S doped Conductivity type N type Carrier Concentration <7E17 ~ 1E18 cm3 Mobility >10000 cm2 V. S EPD <2E4 cm 2 Standard thickness 500 20 mm Size ellipse shape, (area > 30mm diameter) Polish one side
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