VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp Pouch Cell 4H-SiC (0001) Prime grade
$470.14
Description
4H-SiC (0001) Prime grade
be careful not cutting the gloves
With Four secure fixtures
Please keep the thermal gradient less than 100oC/ minute to avoid cracking
Common Dimensions: A = 2
VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp Pouch Cell 4H-SiC (0001) Prime gradeInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Zn doped Conducting type: S C Polish: one side polished Resistivity: (5. 61 6. 84)E 2 ohm. cm Mobility: 81 85 cmE2 V. S EPD: < 5000 cmE2 Carrier Concerntration: (1. 09 1. 37) E18 cm^3 Ra(Average Roughness) : < 0. 4 nm
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