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InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Crimping Load (kg)
InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Crimping Load (kg)
$114.42
Description
Crimping Load (kg)
20 mm (for the separator to fully separate the electrodes in both negative and positive cases)
The lithium foil was packed in the dry room with < 10 PPM H2O
spark-free light
Resistivity: 0
InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Crimping Load (kg)10x10x0. 45 mm InSb wafer (N type, Te doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (0. 19 0. 5)E18 @77K Mobility >(3. 58 5. 6)E4 cm2 Vs EPD <1200 1500 cm 2
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 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Crimping Load (kg)){kind=link}