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Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, P doped, R:1-10 ohm-cm - SIPc50D0279C1R1 Thin Film Deposition 1 wt% Growth Method
Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, P doped, R:1-10 ohm-cm - SIPc50D0279C1R1 Thin Film Deposition 1 wt% Growth Method
$40.52
Description
1 wt% Growth Method
Battery Testing Control Unit
expansion joints
Outstanding electronic properties
Surface finish (RMS or Ra) : < 25A
Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, P doped, R:1-10 ohm-cm - SIPc50D0279C1R1 Thin Film Deposition 1 wt% Growth MethodSingle crystal Silicon Conductive type: N type P doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 279 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
Shipping Notes
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