GaAs (111)A orientation, Semi-Insulating, undoped, 5x5x 0.5-0.55mm, 1sp, Applicators respectively

respectively

Back side: fine ground (Ra:1

the coin cell diameter is going to be 20mm +/- 0

Specifications Normal 0 7

(7 Mpa --70 Mpa) adjustable and reusable and can be used for MTI high-pressure furnaces

GaAs (111)A orientation, Semi-Insulating, undoped, 5x5x 0.5-0.55mm, 1sp, Applicators respectivelyGaAs single crystal wafer Growing Method: VGF Orientation: (111)A Primary Flat: US(0 11); Secondary Flat: US(2 1 1) Size: 5 X 5 x 0. 5 0. 55 mm Polishing: One side polished Doping: undoped Conductor type: Semi Insulating Resistivity:(1. 51 3. 86)E8 ohm. cm Carrier Concentration: N A Mobility: 4120 5860 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces