M06400 - SEMI M64 - 赤外線吸収スペクトル法による絶縁（SI）ガリウムヒ素単結晶内のEL2深いドナー濃度の試験方法 StdTpc-Gases - Process

M06400 - SEMI M64 - 赤外線吸収スペクトル法による絶縁（SI）ガリウムヒ素単結晶内のEL2深いドナー濃度の試験方法 StdTpc-Gases - Processglobal Compound Semiconductor Committee20051129global Audits and Reviews Subcommittee20061www. semi. org20063CD ROM SI GaAsEL2 Referenced SEMI Standards SEMI M39 Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi Insulating GaAs Single Crystals

high-brightness light emitting diode [HB-LED]

or metal-metal (e

orgで，そして2009年11月にCD-ROMで入手可能となる。初版は2007年7月発行，前版は2009年3月に発行された。

It is the responsibility of the users of the Documents to establish appropriate safety and health practices

This Document specifies the interior exclusion volumes for supporting and restraining wafers in the 450 mm carrier

SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe

SEMI C34-0699 (first published - replaces SEMI C2

It is published and sold separately

org in November 2014

originally published in 1984

This Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS

This Specification has two classifications: General Usage and Auto Transport Usage